Abstract
Several devices from the static induction family such as: static induction transistor (SIT), static induction diode (SID), static induction thyristor, lateral punch-through transistor (LPTT), static induction transistor logic (SITL), static induction MOS transistor (SIMOS), and space charge limiting load (SCLL) are described. Static induction transistor can be considered as a short channel junction field effect transistor (JFET) device operating in pre-punch-through region. The number of devices in this family is growing with time. The SIT can operate with the power over 100kW at 100 kHz; above 150W at 3 GHz. Static induction thyristor has many advantages over the traditional silicon controlled rectifier (SCR), and SID exhibits high switching speed, large reverse voltage, and low forward voltage drops The theory of operation of static induction devices is given for both a current controlled by a potential barrier and a current controlled by space charge. The new concept of a punch-through emitter (PTE), which operates with majority carrier transport, is presented. One of the disadvantages of the SIT is the relatively flat shape of the potential barrier.
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