Abstract
An integrated structure of the light-triggered and light-quenched (LTQ) static induction (SI) thyristor is introduced and is fabricated by the combination of the SI thyristor and SI transistor process technology. The device consists of a buried-gate light triggered (LT) SI thyristor and a p,channel surface gate static induction photo-transistor (SIPT). An anode voltage V AK of 500 V at an anode current I AK of 1 A (600 A/cm2: channel current density) is optically switched with a triggering power of P_{LT} = 11 mW/cm2(92 µW) and a quenching power of P_{LQ} = 11 mW/cm2(110 µW) in a turn-on time of 0.7 µs and a turnoff delay time of 1.0 µs. The integrated LTQ SI thyristor is a novel type of self-turn-off power device that is turned on and off by optical means.
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