Abstract
Molecular beam epitaxy (MBE) growth of GaAs1−xBix and related alloys opens up a new means for exploiting metastable alloys exhibiting unique properties, such as luminescence with a temperature-insensitive wavelength. A surfactant-like effect of Bi atoms contributes to the improved quality of GaAs1−xBix under an extreme growth condition different from the conventional one for high-quality III−V semiconductors. A lasing operation of GaAs1−xBix laser diode with a reduced temperature coefficient of lasing wavelength was achieved, thus indicating the potential of GaAs1−xBix and related alloys. Quaternary alloys of GaNyAs1−x−yBix and InyGa1−yAs1−xBix were successfully created by MBE. The band gap of GaNyAs1−x−yBix grown by MBE can be adjusted to the waveband of optical fiber communication by keeping it lattice-matched to GaAs. Photo-and electro-luminescence with temperature-insensitive emission wavelength was demonstrated at a wavelength of 1.3μm.
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