Abstract
Molecular beam epitaxy (MBE) growth of GaAs1−xBix and related alloys opens up a new means for exploiting metastable alloys exhibiting unique properties, such as luminescence with a temperature-insensitive wavelength. A surfactant-like effect of Bi atoms contributes to the improved quality of GaAs1−xBix under an extreme growth condition different from the conventional one for high-quality III−V semiconductors. A lasing operation of GaAs1−xBix laser diode with a reduced temperature coefficient of lasing wavelength was achieved, thus indicating the potential of GaAs1−xBix and related alloys. Quaternary alloys of GaNyAs1−x−yBix and InyGa1−yAs1−xBix were successfully created by MBE. The band gap of GaNyAs1−x−yBix grown by MBE can be adjusted to the waveband of optical fiber communication by keeping it lattice-matched to GaAs. Photo-and electro-luminescence with temperature-insensitive emission wavelength was demonstrated at a wavelength of 1.3μm.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.