Carbon doping in molecular beam epitaxial (MBE) growth of GaAs using neopentane as a novel carbon source

Abstract

Neopentane was successfully used as a new carbon source in the molecular beam epitaxial (MBE) growth of carbon-doped GaAs for the first time. Carbon is effectively incorporated into GaAs by cracking neopentane at temperatures above 700°C. The hole concentration, which agrees with the carbon concentration, increases linearly with increasing the neopentane flow rate. The highest hole concentration obtained with neopentane is 1.6 × 10 20 cm -3, which is as high as the value reported for carbon-doped GaAs using CCl 4 by gas source MBE (GSMBE) and metalorganic chemical vapor deposition (MOCVD). The Hall mobilities are all comparable to those of metalorganic molecular beam epitaxial (MOMBE) grown C-doped GaAs with trimethylgallium (TMG) and solid arsenic.