Chapter 27 - GaSb Lasers Grown on Silicon Substrate for Telecom Applications

Abstract

In this chapter, we review the developments in the epitaxial integration on Si substrates of GaSb-based laser diodes emitting near 1.55µm, i.e., in the telecommunication wavelength range. After discussing the early results, we explain why a new design of the active zones was necessary to reach the target wavelength. Then we review the progress in the molecular beam epitaxy (MBE) growth of GaSb-based materials on Si substrates. We show that laser diodes operating in continuous wave above room temperature have been recently demonstrated and open the way to a still-missing key of Si photonics.