Chapter 25 - Molecular Beam Epitaxy of Wide Gap II−VI Laser Heterostructures

Abstract

The purpose of the chapter is to overview the current status of research in the field of II–VI wide gap laser heterostructures for the “true” green (530−550nm), and yellow (570−590nm) spectral regions, fabricated by molecular beam epitaxy on GaAs and InP (100) substrates, as well as their prospects in manufacturing of long lifetime semiconductor laser diodes (LDs). It presents a phenomenological thermodynamic model of MBE growth of II−VI compounds and alloys, which allows accurate control of their growth rate, composition, surface stoichiometry, and phase separation in wide temperature range. Careful analysis of theoretical and experimental data on fast and slow degradation of II−VI LDs as well as consideration of numerous approaches developed during the last two decades to improve performance and overcome degradation of compact green II−VI lasers, including LDs and alternative high-efficiency lasers with optical and electron-beam pumping, is given with an impact on new designs, materials, and technologies.