Abstract
Molecular beam epitaxy (MBE) growth of GaAs 1-x Bi x and related alloys opens up a new means for exploiting metastable alloys exhibiting unique properties such as luminescence with a temperature-insensitive wavelength. A surfactant-like effect of Bi atoms contributes to the improved quality of GaAs 1-x Bi x under an extreme growth condition different from the conventional one for high-quality III-V semiconductors. A lasing operation of GaAs 1-x Bi x with a reduced temperature coefficient of lasing wavelength was achieved, thus indicating the potential of GaAs 1-x Bi x and related alloys. Quaternary alloys of GaN y As 1-x-y Bi x and InyGa 1-y As 1-x Bi x were successfully created by MBE. The band gap of GaN y As 1-x-y Bi x grown by MBE can be adjusted to the waveband of optical fibre communication by keeping it lattice-matched to GaAs. Photo- and electro-luminescence with temperature-insensitive emission wavelength was demonstrated at a wavelength of 1.3 μm.
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