Abstract
Publisher Summary This chapter demonstrates the nucleation density of diamond. To make a continuous diamond film within one hour or so under the chemical vapor deposition (CVD) conditions, a nucleation density of ≥108 cm -2 is necessary. To achieve this, the Si surface is scratched with diamond powder or paste. The powder size is usually 0.1–30 μm. The nucleation density is increased to approximately 108 cm -2 by this treatment. Alternatively, the Si wafer is ultrasonically treated in alcohol with diamond powder suspension for several minutes. The nucleation density can be increased to 109–1011 cm -2 by this treatment. In both cases, the Si surface is roughened. There are two possibilities on the creation of nucleation sites by scratching. The first possibility is a creation of micro edges of Si by scratching or the ultrasonic treatment of the Si surface, as it is known that diamonds tend to nucleate on sharp edges. The second possibility is the embedded diamond nanoparticles or fragments below the Si surface during the polishing or the ultrasonic treatments.
Published Version
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