Chapter 1 - Overview of Oriented Growth

Abstract

Science and technology of diamond film growth by chemical vapor deposition (CVD) have markedly advanced during the past decade. One of the most notable achievements is the growth of azimuthally oriented diamond particles on β3-SIC by Stoner and Glass, using Yugo's method of bias enhanced nucleation (BEN), which led to the growth of (100)-oriented diamond films on Si(100) that were later named as highly oriented diamond (HOD) films. This technique was further elaborated by the groups of Glass, Koidl, Klages, and Kobe Steel amongst others. Most recently, Kawarada and colleagues were successful in growing perfectly coalesced, (100)-oriented, 300-μm thick HOD films, where there was no grain boundary at the film surface. In the mean time, a new method of diamond heteroepitaxy (spontaneously coalesced) was heuristically found by Shintani, that is, spontaneously coalesced, (111)-oriented diamond films can be grown on surfaces of Pt that have been polished with diamond powder for diamond nucleation. This chapter provides further details regarding diamond film growth by CVD.