Abstract
Highly oriented diamond (HOD) films have much better electrical characteristics than randomly oriented polycrystalline diamond films. In the best-oriented HOD films, the full width at half maximum (FWHM) of the X-ray rocking curve was as small as 0.5º. Judging from the fact that the X-ray probes all the diamonds on the Si surface including the small diamonds in the vicinity of the Si substrate, the true FWHM value of X-ray rocking curve at the diamond film surface should be significantly smaller than 0.5º. Furthermore, the film made by Kawarada has no visible grain boundaries, and the surface is very smooth. Thus, there is no doubt that HOD films can be used for a semiconductor material. However, in the normal HOD films of a few 10-1μm thickness, there still remain misorientations between (100) faces, and the grain boundaries have not been completely removed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
