Abstract
Thin polycrystalline films of β-FeSi 2 have been formed by solid state reaction with boron or phosphorus doped silicon and the corresponding electrical heterojunction properties have been characterised. The transport mechanisms across the β- FeSi 2 n- Si junction is suggested to be limited by either thermionic emission or recombination of electrons at the silicide-silicon interface. Temperature activated current-voltage analysis and capacitance-voltage analysis yielded an effective electron barrier of 0.66 ± 0.03 eV at 0 K. The current transport across the β- FeSi 2 p- Si junction appear to be limited by thermionic emission of holes from the silicon substrate to the silicide. The effective hole barrier is 0.43 ± 0.03 eV independent of temperature.
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