Abstract
A GaAs-based three-branch nanowire junction (TBJ) with Schottky wrap gates (WPGs) is investigated to realize novel Boolean logic gates. The WPG-controlled TBJ shows a bell-shaped voltage input–output curve and is controlled by gate voltage on the WPGs. The observed characteristics are explained using a simple equivalent circuit model. AND gate operation is realized in the WPG-controlled TBJ and its output voltage swing is controlled using WPGs. It can also operate as a NOT gate by changing the measurement circuit. A NAND gate is fabricated by integrating two WPG-controlled TBJs, and correct operation with a voltage transfer gain of 2.2 is realized.
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