Abstract
Abstract An undefined bound exciton line (UDX) with a photon energy 0.6 meV lower than the Si-donor bound exciton line was observed by photoluminescence in GaN layers annealed at 1100 °C after electron beam (EB) irradiation at an energy of 137–2000 keV. The UDX was not observed in samples not subjected to EB irradiation or annealing but was found in a sample annealed after EB irradiation at an energy of 137 keV, where only nitrogen atoms are displaced in GaN. The origin of the UDX was presumably formed by a thermal reaction of defects containing nitrogen-displacement-related defects.
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