Abstract
Nonlinear voltage transfer characteristics in GaAs-based three-branch nanowire junctions (TBJs) controlled by Schottky wrap gates (WPGs) are investigated by characterization of the gate voltage and size dependences in detail. WPGs squeezed the nanowires only in the node portion and modulated the curve only in the low-input-voltage region. When the entire nanowire was narrowed geometrically, the voltage transfer curve became abrupt in a wide voltage range. On the other hand, the nanowire length affected only the curve in the high-input-voltage region. These results indicate that the voltage transfer characteristics of the WPG-controlled TBJ device in the low- and high-voltage regions are controlled by the junction node with WPGs and the end of the positively biased nanowire, respectively. The observed behaviors can be understood in terms of a surface-potential-induced field domain model.
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