Abstract
Auger depth profiling measurements are presented of platinum nickel silicide films grown on n-Si and on n+-Si by annealing a sputter-deposited Pt0.4Ni0.6 alloy layer at 500 °C for 20 min in N2. Quantification of the profiles is achieved by calibration with standards. The silicide composition varies with depth and at the interface is PtxNi1−xSi with x≪1. Also, total sputtering yields and preferential sputtering coefficients are given for 2 keV, 45°, Ar+ bombardment of the elements and their binary and ternary silicides. The amount of preferential sputtering is practically independent of projectile energy (0.5–5 keV) and of substituting Xe+ for Ar+. However, its variation with composition complicates the quantitative analysis of nickel.
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