Abstract
A solid immersion holographic method for the recording of refractive-index and surface-relief modulated gratings with a period of 0.2 µm–1 µm in amorphous films of chalcogenide semiconductors As2S3 and As-S-Se has been developed and studied. The angular selectivity of holographic recording in amorphous chalcogenide thin films can be improved significantly by a decrease of grating period. The possibility to use the amorphous chalcogenide films as a media for holographic recording and storage of information with high density is discussed. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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