Abstract
A solid immersion holographic method for the recording of refractive index and surface-relief modulated gratings with a period of 0.1-1 μm in amorphous films of chalcogenide semiconductors As 2 S 3 and As-S-Se has been developed and studied. The laser immersion interference lithography can be used as a low-cost method for the exposure of large surfaces with regular patterns like subwavelength-gratings and microsieves. The polarization sensitive properties of the subwavelength refractive-index modulated transmission gratings were studied. The possibility to use the amorphous chalcogenide films as a media for holographic recording and storage of information with high density is discussed.
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