Abstract
A solid immersion holographic method for the recording of refractive-index and surface-relief modulated gratings with a period of 0.2–1 μm in amorphous films of chalcogenide semiconductors As2S3 and As–S–Se has been developed and studied. The angular selectivity of holographic recording in amorphous chalcogenide thin films can be improved significantly by a decrease of grating period. The possibility to use the amorphous chalcogenide films as a media for holographic recording and storage of information with high density is discussed.
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