Abstract
Multiple-gate devices, such as the planar double-gate (DG), triple-gate (TG), FinFET, Pi-Gate (PG), and Omega-Gate Silicon-on-Insulator (SOI) MOSFETs are potential candidates for achieving the performance targets of the International Roadmap of the Semiconductor Industry Association. In this paper, wideband experimental and three-dimensional simulation analyses have been carried out to compare the analog/RF performance of DG, TG/FinFET, PG, and single-gate (SG) SOI MOSFETs. The characteristics of the multiple-gate devices were analyzed in the dc and ac regimes from subthreshold region to strong inversion and saturation regions. In both regimes, the advantages and limitations of the multiple-gate devices over the SG structure are discussed for channel length scaling well below 100 nm. To the authors' knowledge, it is the first time that such extensive results and analyses are presented on the potential of these novel devices for high-frequency analog applications.
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