DC AND AC ANALYSES OF NOVEL SOI MOSFET DEVICES USING 2D AND 3D NUMERICAL SIMULATIONS

Abstract

Novel devices such as Double Gate (DG), Triple Gate (TG) or FinFET, Pi-Gate (PG) and Omega-Gate SOI MOSFETs are potential candidates for achieving the performance predictions of the International Roadmap of the Semiconductor Industry Association. In this paper, we analyzed the DG, TG and PG in comparison with the Single Gate (SG) SOI MOSFET using the commercial 3D numerical simulator SILVACO in the DC and AC regimes from subthreshold region to strong inversion and saturation regions. In the DC regime, multiple gate devices are superior to SG device from micrometer down to nanometer scale lengths. In the AC regime, the advantages of the multiple gate devices over SG devices are significant especially when the channel length reduces below 100 nm. For the first time, we have shown the great interest and potential of these multiple gate devices for high frequency analog applications.