Abstract
AbstractThis article describes the design and characterization of a wideband, 40% bandwidth microwave one port reflection amplifier.Experimental and simulation results are presented. The one port reflection amplifier uses a silicon bipolar transistor and demonstrates a return gain of better than 10 dB from 8 to 11.5 GHz. The gain of the refection amplifier can be easily DC modulated. In addition, a pair of reflection amplifiers is used to create a wideband bidirectional amplifier. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:553–555, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26597
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