The equivalence of displacement damage in silicon bipolar junction transistors

Abstract

The current gain degradation in silicon bipolar junction transistors (BJTs) is examined under the irradiation with heavy ions. To characterize the radiation damage of the BJTs, the ionizing dose Di and displacement dose Dd verse the chip depth in the BJTs have been calculated for heavy ions. Based on the irradiation testing and calculation results, an approach to evaluate the equivalence of displacement damage in silicon BJTs is given, which could optimize the non-ionizing energy loss (NIEL) methodology and normalize the displacement damage caused by heavy ions.