Abstract
AbstractThe TiS2 compound has attracted considerable attention among researchers in the fields of energy storage and conversion, as well as semiconductor materials. This is due to its remarkable capability to incorporate various elements into its van der Waals gap, as well as its potential to adjust the carrier concentration within the material to optimize its electrically relevant properties. In our study, we employed a terahertz (THz) time‐domain spectroscopy system to measure the spectra of TiS2 within the THz frequency range. Through this analysis, we examined the optical parameters, such as transmittance and refractive index, of the TiS2 samples. Additionally, we conducted optical pumping correlation experiments using THz detection technology to investigate the optical pumping effects on TiS2. By analyzing the THz energy transmission process in different states, we were able to calculate and fit the carrier recombination time. The findings of our research hold significant implications for the advancement of THz devices operating in the 6G frequency band.
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