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https://doi.org/10.1049/el:19860445
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Cite Journal: Electronics Letters |  Publication Date: Jun 5, 1986 |
 Citations: 63 |
Affiliation: Stanford University
We report optical charge sensing of real-time 0.8 V digital signals in a silicon bipolar transistor in a 20 MHz bandwidth using a 1.3 μm semiconductor laser, and in a 100 MHz bandwidth using a 1.3 μm Nd:YAG laser. The probe is noninvasive, inducing a transistor base current of less than 10 nA.
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