Abstract
Two vertical type submicron p-channel depletion mode SiC MOSFETs have studied. To produce the first MOSFET a SiC thin film was sputtered on a Si substrate at 600°C and annealed at 1300°C for 5 h in Ar atmosphere. For this MOSFET, the current-voltage characteristics of 1.6 and 0.6 μm channel length have been investigated. In this structure, the drain characteristics show an incomplete saturation because the channel depth is too wide to be depleted. For the other MOSFET, the SiC thin film is deposited at the sidewall of the SiO 2 insulator by RF sputtering at 600°C, and a 0.4 μm channel length has been developed. This MOSFET shows good saturation characteristics. Also, this device possesses a drain breakdown voltage beyond 16V. These experimental results give the foundation for the future development of submicron SiC power integrated circuit technology.
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