Supersonic jet epitaxy of single crystalline cubic SiC thin films on Si substrates from t-Butyldimethylsilane

Abstract

Cubic SiC thin films have been grown by supersonic jet epitaxy (SJE) using the single molecular precursor t-butyldimethylsilane (TBDMS), (CH 3) 3C–SiH(CH 3) 2. Single crystal cubic SiC thin films were grown on both carburized and uncarburized Si(100) at a temperature of 830°C. Highly oriented cubic SiC(111) thin films were obtained on carburized and uncarburized Si(111) substrates at 830°C. This growth temperature is much lower than conventional CVD growth temperatures. It is believed that this is the first report of SiC growth using t-butyldimethylsilane.