Growth of Epitaxial β-SiC Films on Porous Si(100) Substrates from MTS in a Hot Wall LPCVD Reactor

Abstract

Abstractβ–SiC thin films were epitaxially grown on porous Si(100) substrates at 1150° C from methyltrichlorosilane (CH3SiCl3 or MTS) in a hot wall reactor by Vsing low pressure chemical vapor deposition (LPCVD). The growth rate was 120 Å/min. Epitaxial β–SiC(100) thin films were obtained after a deposition time of 12.5 min. The crystallinity of the β–SiC films was affected by the deposition time. For instance, rotational β–SiC(100) crystals and polycrystalline β–SiC with a highly preferred orientation of (100) planes were observed for a deposition time of 50 min. The results from XRD and TEM indicated that polycrystalline β–SiC films with a preferred orientation of β–SiC(111) appeared after further increasing the deposition times (time ≥ 75 min). The change in crystallinity is attributed to increasing roughness with increasing deposition time.