Abstract
The trend toward device miniaturization makes it necessary to scan a wide range of supply and threshold voltages and different types of FETs, so that optimal performance is obtained. Such a scan is best done by physically based models, so that predictive circuit modeling can be done to project and optimize circuit performance well into the next decade. Circuit simulators like HSPICE cannot be used for predictive modeling and thus a methodology is needed to use existing FET physical models to predict circuit performance. Such a methodology is proposed in this paper and verified against HSPICE. The proposed method works for a wide range of supply voltages, for a variety of FETs and avoids any numerical integration.
Published Version
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