Abstract
This work presents the design and electrical characterization of in-house-fabricated 2-input NAND gate. The monolithic bipolar 2-input NAND gate employing transistor-transistor logic (TTL) is demonstrated in 4H-SiC and operates over a wide range of temperature and supply voltage.The fabricated circuit was characterized on the wafer by using a hot-chuck probe-station from 25 °C up to 500 °C. The circuit is also characterized over a wide range of voltage supply i.e. 11 to 20 V. The output-noise margin high (NMH) and output-noise margin low (NML) are also measured over a wide range of temperatures and supply voltages using voltage transfer characteristics (VTC). The transient response was measured by applying two square waves of, 5 kHz and 10 kHz. It is demonstrated that the dynamic parameters of the circuit are temperature dependent. The 2-input TTL NAND gate consumes 20 mW at 500 °C and 15 V.
Highlights
Silicon based integrated circuits (ICs) have been improved significantly in terms of speed, power, and size, but mainly in the low-temperature range (< ≈ 200 °C)
According to the schematic of the transistor logic (TTL) NAND gate, it consists of three stages
The transient response of 2-input NAND gate as an inverter is shown in Fig. 5 made at 25 to 500 °C by applying the same 10 kHz square wave at both inputs
Summary
Silicon based integrated circuits (ICs) have been improved significantly in terms of speed, power, and size, but mainly in the low-temperature range (< ≈ 200 °C). Measurement results of digital circuits designed using Fig. 1. This work presents the design, in-house fabrication and electrical characterization of 2-input NAND gates.
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