Design of High-Voltage Level Shifters Based on Stacked Standard Transistors for a Wide Range of Supply Voltages

Abstract

This paper presents the design of two high-voltage level shifters suitable for a wide range of supply voltages. In view of certain drawbacks identified during the design, implementation, simulation and measurement of a 3-stacked CMOS driver using capacitive feedback level shifters, improved high-voltage level shifters are designed. These circuits are compared with each other in terms of their circuit description, drawbacks, advantages and simulation results. The circuit designs are technology-independent and compatible with scaled CMOS devices because these circuits are based on stacked standard transistors. Both high-voltage level shifters are proved by simulating in 65-nm TSMC technology with a nominal voltage of 2.5 V. The level shifter can be applied for supply voltages between 2.6 V / 3.5 V and 7.5 V, respectively. The supply voltage range is extended by 67% and 104% respectively when compared against common level shifters.