Abstract
In general, closer proximity of embedded SiGe (eSiGe) source drain (S/D) structure to the channel improves p-channel metal oxide semiconductor field-effect transistor (pMOSFET) performance because of the higher stress in the channel. However, we found the critical optimization methodology which has a relation between boron diffusion modulation in SiGe and short channel effect (SCE) in the context of the eSiGe proximity change. Therefore, additional source drain extension (SDE) optimization is required to improve device performance with closer eSiGe proximity focusing on the parasitic resistance reduction. As a result of the optimization, we have demonstrated high drive current of 755 μA/μm at V dd = 1.0 V, I OFF = 100 nA/μm, 30 nm gate length pMOSFET.
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