Abstract
A quasi-analytical model addressed to predict the breakdown voltage in four-layer transient voltage suppressor (TVS) diodes based on the punch-through effect is reported in this paper. For breakdown voltage in excess of 1 V, a closed form expression is derived. In addition, the three-layer TVS diode can also be described with the developed model. Finally, results obtained from the model are in good agreement with simulation and experimental data.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
