Abstract
A quasi-analytical model addressed to predict the breakdown voltage in four-layer TVs diodes with Gaussian epitaxial profile is developed for the first time in this work. The model yields the breakdown voltage value in terms of technological and/or geometrical device parameters, being suitable for cases where the punch-through takes place before the avalanche breakdown. For breakdown voltages in excess of 3 V, a closed form expression can be inferred, simplifying the quasianalytical model. In addition, the existent three-layer structure model is obtained when proper boundaries are included in the proposed model. Analytical results are in satisfactory agreement with the simulation and experimental data.
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