A novel plating bath device for reducing surface copper thickness and improving wafer-scale uniformity

Abstract

Through silicon via (TSV) technology plays a pivotal role in three-dimensional integrated circuits. However, excessive surface thickness and uneven wafer plating during TSV copper electroplating pose significant challenges to TSV reliability. This paper proposes a novel rotating cathode electroplating technique that utilizes flow field induction by a rotating cathode to significantly reduce the surface copper thickness by approximately 8 μm, leading to improved uniformity of wafer-scale electroplating and facilitating rapid TSV filling. This study focuses on the impact of cathode rotation speed and chip position on TSV filling quality. The experimental findings demonstrate that increasing the cathode rotation speed reduces the diffusion layer thickness, thereby enhancing filling quality. Additionally, variations in chip position influence surface copper thickness. The introduction of bis(3-sulfopropyl) disulfide accelerant expedites the filling process, boosts the filling ratio, and enables defect-free TSV filling. This study offers valuable insights into the wafer-scale TSV electroplating process and facilitates the optimization of parameter settings during electroplating.