Development of Low Temperature Double Level TSV, Hole and Seal Process for Low Pressure Zero Level MEMS Packaging

Abstract

Through Silicon Via (TSV) technology is considered one of the key methods to enable heterogeneous integration at the third dimension and realize electrical interconnection between device parts. In that context, different components (MEMS, sensors, circuits etc.) can be electrically integrated in 3D manner, increasing stack density, shrinking footprint, and reducing fabrication costs. At MEMS integration, it is important to explore the packaging method that enables the optimum performance of the active MEMS component and the TSV approach to electrically connect it with the package. Herein, we present our via-last approach to integrate a zero-level packaged MEMS wafer defined by cavity SOI (C-SOI) and CMOS readout circuitry (at thermal budget <400ºC). TSV distribution and fabrication route ensures the electrical connectivity of MEMS inertial sensor and CMOS. Furthermore, a hole is added to the layout scheme and sealed afterwards to ensure low pressure encapsulation in the MEMS cavity.In our previous work related to MEMS fabrication [1], we elaborated the superiority of C-SOI start material over conventional fabrication methods (like vapor HF). In our approach, MEMS cavity structures are realized by patterning dielectrics and the moving parts by employing deep Si etch (DSiE) method (Fig 1 a-c). To enhance the dielectric surface smoothness prior bonding, a complementary HF -based clean applied. This way, bonding requirements (Rq<1nm, Rrange<10nm) are met. CMOS wafer is fabricated with a single layer of Cu damascene process in a dielectric stack to create complementary bonding medium for MEMS wafer. Selected dielectrics at MEMS (thermal oxide) and CMOS (SiCN) can perform better at low temperature fusion bonding due to their moisture blocking capability. Next, fusion bonding at room temperature is carried out using assisted force (60kN) to enhance bonding efficiency and completed by curing the wafer pair at 350˚C.In this paper, we present further work to complete the MEMS zero-level packaging through electrical connections and vacuum seal. Fabrication sequence continues on the backside of the MEMS wafer (Fig 1d-g). First the desired top membrane (cap) thickness of MEMS wafer realized by thinning bulk Si substrate down to 50µm. After SiOx deposition, a double TSV approach is carried out aiming to create the electrical interconnections between the package components, one to reach to the sensor parts in MEMS wafer and one to reach to CMOS. TSV for enabling the connection with sensor parts (12x50μm) is realized by DSiE through the top Si membrane and buried oxide (BOX) landing at Si epi layer of C-SOI. Isolation of this TSV is obtained by conformal liner deposition using SACVD SiOx (350C). Liner opening at the TSV base is assisted by a second non-conformal dielectric deposition to protect the sidewall isolation during resistless directional liner etch back at TSV bottom. Metallization of the via is carried out by sequential PVD barrier (Ta) and seed (Cu) depositions; and the TSV is filled with electroplated Cu. MEMS top surface is then cleared either by CMP or by wet and dry etching of Cu and Ta, respectively. TSV for connecting to CMOS (20x80μm) follows the same processing route with an additional DSiE through all the C-SOI MEMS stack and landing on designated plugs on CMOS. With these two TSV schemes it is ensured to bias and measure the inertial sensor, its driving circuitry, and the zero-level package (Fig. 2a)Once the two TSVs fabrication is completed, hole for the vacuum sealing can be created. First, the top dielectric on surface of MEMS wafer is etched in circular areas of diameter 10μm to define where the venting holes will be created. This is mainly to expose Si surface and reduce possible leakage paths, as well as to increase the adhesion of the deposited metallization to close the hole under vacuum. Small hole (Ø2μm) is defined in the middle of the Si circular area by lithography and etching through the top MEMS membrane (50μm) landing on the cavity of the C-SOI (Fig 1f). Vacuum seal of the zero-level package is finalized with bond pad creation which also seals the hole under vacuum. Al deposition is carried out at high vacuum PVD system; the hole is simultaneously sealed and preserve the same vacuum as the PVD chamber. Along with the chamber vacuum level, the Al thickness and power is also very important to achieve the desired seal Fig.2b.Proposed work enables zero-level MEMS hermetic packaging with integrated CMOS and developed on 200mm wafers.[1] Development of Copper/Dielectric Hybrid Fusion Bonding with Cavity for CMOS compatible Wafer Level Hermetic Packaging, A.Malainou, J.Visker, D.Sabuncuoglu, 21st EPTC, Singapore 2019 Figure 1