Abstract
In this paper, a planar, multi-cell Lateral Insulated Gate Bipolar Transistor (MCLIGBT) in the Double Epitaxial Layer Dielectric Isolation (DELDI) technology is proposed. This novel device exhibits a quasi-vertical mode of operation to achieve a localized conductivity modulation in the sandwich region between the adjacent cathode cells. Detailed numerical analysis shows that the Kirk effect plays an important role in achieving such a localized conductivity modulation and a significantly enhanced on-state performance is achievable without affecting its switching and blocking capability. Furthermore, this device does not require additional fabrication steps to an existing high voltage CMOS process and, therefore, is highly cost and area efficient.
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