Abstract
In this paper a novel multi cathode cell approach to improve the on-state performance of Lateral Insulated Gate Bipolar Transistors (LIGBTs) is proposed. This approach does not require any additional process modification to a HV-CMOS technology. Detailed numerical simulations reveal that a quasi-vertical mode of injection can be achieved to modulate the conductance of the region sandwiched between two adjacent cathode cells. This approach does not affect the switching performance and the blocking voltage capability. The validity of this approach is demonstrated using a multi-channel LIGBT in the Double Epitaxial Layer Dielectric Isolation (DELDI) technology.
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