Abstract
Resistance switching random access memory (RRAM) has drawn considerable attention for the application in non- volatile memory element in semiconductor memory devices. A ZnO thin film now assumed to be useful for dynamic random access memory (DRAM) cell. In this paper we provide a framework to its use as a switching ON or OFF in DRAM cell. In this type of memory cell the ZnO thin film has a lot of importance instead of a transistor. Inside the DRAM cell, we are suggested to use the ZnO thin film due to its reliable and repeated switching of the resistance. Thus after the replacement of ZnO thin film as a switching element instead of a transistor, the DRAM cell has a strong resistance switching capability.
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