Abstract
A new charge-oriented semi-empirical non-quasistatic (NQS) model is developed for small geometry MOSFETs that is computationally efficient to be useful for circuit simulation. The NQS model includes the effect of velocity saturation, gate field dependent mobility, charge sharing, drain induced barrier lowering and geometric dependencies of threshold voltage. To model the carrier inertia that causes non-steady state conditions, a non-quasistatic model is adopted. An approximate inversion charge profile is used to reduce the nonlinear current-continuity equation to an ordinary differential equation. The model is valid in all regions of operation (weak, moderate and strong inversion) and is derived without resorting to the approximate arbitrary channel charge partitioning. The results from the proposed model are examined and compared with 2D simulation results and good agreement is obtained for the transient source, drain and gate currents for large signals applied to the gate.
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