Physical-based non-quasi static MOSFET model for DC, AC and transient circuit analysis

T Pesic,N Jankovic

doi:10.1109/icmel.2004.1314611

Physical-based non-quasi static MOSFET model for DC, AC and transient circuit analysis

T Pesic, N Jankovic

https://doi.org/10.1109/icmel.2004.1314611

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Publication Date: May 16, 2004

Citations: 3

Affiliation: University of Nis

#Non-quasi Static Model #Non-quasi Static + Show 8 more

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Abstract

In this paper, we describe a compact physical-based non-quasi static (NQS) MOST model for SPICE. Based on the comparison with results of 2-D device simulations, it is shown that new NQS model can accurately predict NMOST behavior during DC, AC and transient operation.

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