Abstract
A new contactless dual-beam S-polarized reflectance (DBSPR) technique has been developed for measuring the top Si film and buried oxide thickness in a SIMOX (Separation by IMplantation of OXygen) wafer. Top Si film and buried oxide thicknesses of the SIMOX wafers ranging from 0.2 to 1.6 μm and 0.36 to 0.44 μm, respectively, were determined using this new technique. The DBSPR method is based on the S-polarized reflectances measured at oblique angle incidence using laser beam of different wavelengths ( λ = 442 and 632.8 nm). A theoretical model for the DBSPR technique has been derived for determining the top Si film and buried oxide thicknesses in the SOI wafers. A three-dimensional (3D) mapping of the top Si film and buried oxide thicknesses for several SIMOX wafers has been carried out, and the results were found in excellent agreement with values determined by the conventional reflection interference spectroscopy and ellipsometry methods.
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