Abstract
A contactless dual-beam optical modulation (DBOM) technique has been applied to measure the film carrier lifetimes in the SIMOX (separation by implantation of oxygen) wafers with different oxygen implant doses, annealing temperatures, and film thicknesses. Film carrier lifetimes ranging from 0.23 to 0.72 μs were observed in these wafers. The DBOM method is based on the modulation of the transmission intensity of an infrared (IR) probe beam by a visible pump beam (hν≥Eg) via free-carrier absorption in the SIMOX wafer. A theoretical model is developed to deduce the excess carrier lifetimes in the SIMOX film by the DBOM technique. Mappings of the film carrier lifetimes in these SIMOX wafers were also carried out.
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