Abstract
A contactless dual-beam optical modulation (DBOM) technique has been applied to measure substrate carrier lifetimes in SIMOX (Separation by IMplantation of OXygen) wafers with different oxygen implant doses, annealing temperatures and film thicknesses. Substrate carrier lifetimes ranging from 5 to 20 μs were observed in these wafers. The DBOM method is based on the modulation of the transmission intensity of an infrared (IR) probe-beam by a visible pump-beam ( hν ⩾ E g) via free carrier absorption in the SIMOX wafer. A theoretical model is developed to deduce the excess carrier lifetimes in the SIMOX substrate by the DBOM technique. Mappings of the substrate carrier lifetimes in these SIMOX wafers were carried out, and the results are in good agreement with values determined by the surface photovoltage (SPV) method.
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