Abstract
We discuss an extension of the Lattice Boltzmann method which may prove useful for the numerical study of electron transport in semiconductors.
Highlights
We discuss an extension of the Lattice Boltzmann method which may prove useful for the numerical study of electron transport in semiconductors
Lattice-gas (LG) models obeying cellular automata rules and the related Lattice-Boltzmann (LB) technique have known a rapid expansion in the recent years mostly in connection with the simulation of complex hydrodynamic phenomena [1, 2, 3, 4] The driving force behind these methods is their outstanding amenability to parallel processing which stems from the extreme space-time locality of cellular automata rules
In the recent years, extensions of the LB method have been developed which are capable of handling several generalizations of the NavierStokes equations, including transport of passive scalars, and flows with thermal and chemical effects
Summary
IBM European Centerjbr Scientific and Engineering Computing, v. Oceano Pacifico 171, Rome, 00144, Italy Mathematics Department, University of Catania, via Andrea Doria, Catania, Italy. We discuss an extension of the Lattice Boltzmann method which may prove useful for the numerical study of electron transport in semiconductors
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