Abstract
Amorphous semiconductors are an important class of semiconductors due to their low temperature deposition and high areal homogeneity over large areas which have been used mainly for display back panel driving circuits. Recent improvements in carrier mobilities in multi-component amorphous semiconductors have opened new area of applications for these amorphous semiconductors. To develop new multi component amorphous structures with optimized electronic properties, it is essential to understand the electron transport behavior in these materials. We have compared electronic structure of amorphous oxide and amorphous oxy-nitride semiconductors to understand the electronic transport in these semiconductors. We also propose certain methods to significantly reduce the computational time required to generate new multi-component amorphous structures and to study their electronic properties such that the development of new amorphous semiconductors with optimized electronic properties can be accelerated.
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