Electronic transport in semiconductors at high energy

Abstract

We briefly review the hot-electron effects which have necessitated the development of accurate solutions of the Boltzmann transport equation. The Monte Carlo particle method of simulating electronic transport in semiconductors is described, with emphasis on the importance of the bandstructure and scattering rates. Three active areas of research then reviewed: (1) simulation of femtosecond spectroscopy experiments, (2) precise calculation of the band-to-band impact ionization rates, and (3) calculation of the electron-phonon interaction based on pseudopotentials. With these three examples we indicate the direction Monte Carlo simulation of electronic transport in semiconductors is taking, i.e., the inclusion of more precise physics and the elimination of phenomenological, adjustable parameters.