Abstract

To get high accuracy, various weight should be stored in memory. For this, this paper presents tri-state weight static random access memory(SRAM). 12T SRAM is a form of power gating on the conventional 10T SRAM. By using power gating, the inverter can be turned off. The new weight (0) can be stored in 12T SRAM when inverter is turned off. The operator fabricated in a 0.18-µm CMOS process dissipates 172.3µW with the supply of 1.8V while convolution. Even without sizing, the writing margin is better than the conventional SRAM and the accuracy is improved by 23.2%.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call