0.8 µm CMOS Process Compatible 60 V–100 m Ω·mm 2 Power MOSFET on Bonded SOI

Abstract

In the present paper, we propose high voltage lateral power metal-oxide-semiconductor field effect transistor (MOSFET) on silicon on insulator (SOI), using the pure 0.8 µm complementary metal-oxide-semiconductor (CMOS) processes without diffusion self-alignment. The measured specific on-resistance of the developed lateral power n-channel MOSFET (NMOSFET) was 100 m Ω·mm2 and breakdown voltage was 60 V. The fabricated device attains its on-resistance comparable to that of diffusion self-align MOSFET (DMOSFET). It also achieves high side switch operation by a reasonable cost, and can be integrated with Bipolar CMOS (BiCMOS) circuits and micro processing unit (MPU). Compatibility of the developed MOSFET to these low voltage circuits are demonstrated. Furthermore, we show that the MPUs and BiCMOS analog circuit on SOI is suitable for high temperature operation.