Inversion Layer Mobility in SiC MOSFETs

Abstract

Lateral MOSFETs (metal oxide semiconductor field effect transistors) were fabricated of 6H-SiC and 4H-SiC using a non-selfaligned technology. A low temperature deposited oxide was used as the gate dielectric. After deposition the oxide was subjected to both inert as well as oxidizing anneals. In this paper, we report the first lateral n-channel MOSFETs on 4H-SiC, to our knowledge, with high inversion layer electron mobility of 160 cm{sup 2}/Vs. Further, we report the highest measured inversion layer electron mobility of 110 cm{sup 2}/V.s on lateral n-channel 6H-SiC MOSFETs. (orig.) 12 refs.