Comparative study of Ge pMOS and In0.3Ga0.7As nMOS with Si MOSFETs for digital applications

Abstract

In this paper, comparative analysis of ultra-thin body (UTB) silicon-on-insulator (SOI) and III∓V-on-insulator (XOI) n-channel metal oxide semiconductor field effect transistors (MOSFETs) has been carried out. In addition, the comparative analysis of UTB SOI and Ge-on-insulator (GOI) p-channel MOSFETs has also been carried out. It has been found that, due to higher electron mobility in In0.3Ga0.7As and hole mobility in Ge, ON-state drive current (ION) in the case of In0.3Ga0.7As n-channel MOSFET (nMOS) and Ge p-channel MOSFET (pMOS) is significantly improved over the SOI nMOS and pMOS devices. Further, sub-threshold swing (SS), drain induced barrier lowering (DIBL) and the OFF-state leakage current (IOFF) in the case of InGaAs nMOS and Ge pMOS reduces over the SOI nMOS and pMOS devices. This clearly shows that, InGaAs nMOS and Ge pMOS are the most promising devices for future digital integrated circuits.